Please use this identifier to cite or link to this item:
|Title:||An Approach for the Design of Cylindrical Surrounding Double-Gate MOSFET|
|Authors:||Srivastava, Viranjay M.|
Yadav, K. S.
|Publisher:||Jaypee University of Information Technology, Solan, H.P.|
|Abstract:||In this paper, we have explored the designing approach of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This proposed CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements as drain current, resistances at switch ON condition, capacitances, energy stored required for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, ONresistance is lower which shows that the isolation is better in CSDG MOSFET as compared to single-gate MOSFET and double-gate MOSFET.|
|Appears in Collections:||Conference Papers|
Files in This Item:
|An approach for the design of Cylindrical Surrounding Double-Gate MOSFET.pdf||163.65 kB||Adobe PDF||View/Open|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.