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dc.contributor.authorSrivastava, Viranjay M.-
dc.contributor.authorSingh, Ghanshyam-
dc.contributor.authorYadav, K. S.-
dc.description.abstractIn this paper, we have explored the designing approach of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This proposed CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements as drain current, resistances at switch ON condition, capacitances, energy stored required for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, ONresistance is lower which shows that the isolation is better in CSDG MOSFET as compared to single-gate MOSFET and double-gate MOSFET.en_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectCylindrical Surroundingen_US
dc.subjectDouble-Gate MOSFETen_US
dc.subjectCMOS Switchen_US
dc.titleAn Approach for the Design of Cylindrical Surrounding Double-Gate MOSFETen_US
dc.typeConference Paperen_US
Appears in Collections:Conference Papers

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