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dc.contributor.authorSrivastava, Viranjay Mohan-
dc.contributor.authorSingh, Ghanshyam-
dc.contributor.authorYadav, K. S.-
dc.description.abstractEstablished RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to provide a plurality of such switches, where the power and area could be reduced as compared to already existing transceiver switch configuration, which is simply a reduction of signal strength during transmission for RF. Our result shows that the peak output currents in these devices are around 0.387 mA and the switching speed is 30 - 31 ps.en_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectCMOS Switchen_US
dc.subjectDP4T Switchen_US
dc.subjectRadio Frequencyen_US
dc.titleDrain Current and Switching Speed of the Double-Pole Four-Throw RF CMOS Switchen_US
dc.typeConference Paperen_US
Appears in Collections:Conference Papers

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