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dc.contributor.authorSharma, Neha-
dc.contributor.authorSharda, Sunanda-
dc.contributor.authorSharma, Vineet-
dc.contributor.authorSharma, Pankaj-
dc.date.accessioned2022-07-21T05:09:43Z-
dc.date.available2022-07-21T05:09:43Z-
dc.date.issued2013-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui//xmlui/handle/123456789/4708-
dc.description.abstractSelenium based chalcogenide glasses are attractive candidates for IR devices due to their low transmission loss. Thermal studies for Ge19Se81-xSbx (x = 0, 4, 8, 12, 16, 17.2, 20) have been carried out using differential thermal analysis. Glass transition temperature has been calculated using Tanaka’s relation. Marseglia’s and Ozawa’s methods have been used for the calculation of activation energy for crystallization. Effect of Sb addition on GeSe base system shows that resistance to devitrification increases up to x = 17.2.en_US
dc.description.sponsorshipProceeding of International Conference on Recent Trends in Applied Physics and Material Science, AIP Conf. Proc. 1536, 615-616(2013); DOI: 10.1063/1.4810377en_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectDifferential thermal analysisen_US
dc.subjectGlass transitionsen_US
dc.titleStability Analysis of IV-V-VI Chalcogenide Glasses Using Glass Transition and Crystallization Temperatureen_US
dc.typeConference Paperen_US
Appears in Collections:Conference Papers



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