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Title: Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
Authors: Srivastava, Viranjay M.
Singh, Ghanshyam
Yadav, K.S.
Keywords: Capacitance-voltage curves
LCR Meter
MOS device
Issue Date: 2010
Publisher: Jaypee University of Information Technology, Solan, H.P.
Abstract: For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
Description: International Journal of Computer Applications (0975 – 8887) Volume 1 – No. 7
ISSN: 0975 – 8887
Appears in Collections:Journal Articles

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