Basic Physical Analysis of New Sb-Se-Ge-In Chalcogenide Glassy Alloys by Predicting Structural Units - A Theoretical Approach

Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/5228

Full metadata record

DC Field	Value	Language
dc.contributor.author	Sharda, Sunanda	-
dc.contributor.author	Sharma, Neha	-
dc.contributor.author	Sharma, Pankaj	-
dc.contributor.author	Sharma, Vineet	-
dc.date.accessioned	2022-07-28T04:28:02Z	-
dc.date.available	2022-07-28T04:28:02Z	-
dc.date.issued	2012	-
dc.identifier.uri	http://ir.juit.ac.in:8080/jspui//xmlui/handle/123456789/5228	-
dc.description	Chalcogenide Letters Vol. 9, No. 9, September 2012, p. 389 - 395	en_US
dc.description.abstract	Indium based chalcogenides have an adequate potential in nonlinear and optoelectronic applications. Sb10Se65Ge25-yIny (y = 0, 3, 6, 9, 12, 15) system has been studied theoretically for physical parameters. The connectivity of the system has been discussed in terms of average coordination number and total number of constraints which also influence the mean bond energy and cohesive energy of the system. Energy band gap has been correlated to average single bond energy and electronegativity.	en_US
dc.language.iso	en	en_US
dc.publisher	Jaypee University of Information Technology, Solan, H.P.	en_US
dc.subject	Chalcogenides	en_US
dc.subject	Glass transition	en_US
dc.subject	Band gap	en_US
dc.title	Basic Physical Analysis of New Sb-Se-Ge-In Chalcogenide Glassy Alloys by Predicting Structural Units - A Theoretical Approach	en_US
dc.type	Article	en_US
Appears in Collections:	Journal Articles

Files in This Item:

File	Description	Size	Format
Basic Physical Analysis of New Sb Se Ge in Chalcogenide Glassy Alloys by Predicting Structural Units a Theoretical Approach.pdf		241.06 kB	Adobe PDF	View/Open