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dc.contributor.authorSharda, Sunanda-
dc.contributor.authorSharma, Neha-
dc.contributor.authorSharma, Pankaj-
dc.contributor.authorSharma, Vineet-
dc.descriptionChalcogenide Letters Vol. 9, No. 9, September 2012, p. 389 - 395en_US
dc.description.abstractIndium based chalcogenides have an adequate potential in nonlinear and optoelectronic applications. Sb10Se65Ge25-yIny (y = 0, 3, 6, 9, 12, 15) system has been studied theoretically for physical parameters. The connectivity of the system has been discussed in terms of average coordination number and total number of constraints which also influence the mean bond energy and cohesive energy of the system. Energy band gap has been correlated to average single bond energy and electronegativity.en_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectGlass transitionen_US
dc.subjectBand gapen_US
dc.titleBasic Physical Analysis of New Sb-Se-Ge-In Chalcogenide Glassy Alloys by Predicting Structural Units - A Theoretical Approachen_US
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