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http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/5228| Title: | Basic Physical Analysis of New Sb-Se-Ge-In Chalcogenide Glassy Alloys by Predicting Structural Units - A Theoretical Approach |
| Authors: | Sharda, Sunanda Sharma, Neha Sharma, Pankaj Sharma, Vineet |
| Keywords: | Chalcogenides Glass transition Band gap |
| Issue Date: | 2012 |
| Publisher: | Jaypee University of Information Technology, Solan, H.P. |
| Abstract: | Indium based chalcogenides have an adequate potential in nonlinear and optoelectronic applications. Sb10Se65Ge25-yIny (y = 0, 3, 6, 9, 12, 15) system has been studied theoretically for physical parameters. The connectivity of the system has been discussed in terms of average coordination number and total number of constraints which also influence the mean bond energy and cohesive energy of the system. Energy band gap has been correlated to average single bond energy and electronegativity. |
| Description: | Chalcogenide Letters Vol. 9, No. 9, September 2012, p. 389 - 395 |
| URI: | http://ir.juit.ac.in:8080/jspui//xmlui/handle/123456789/5228 |
| Appears in Collections: | Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Basic Physical Analysis of New Sb Se Ge in Chalcogenide Glassy Alloys by Predicting Structural Units a Theoretical Approach.pdf | 241.06 kB | Adobe PDF | View/Open |
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