Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8587
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dc.contributor.authorSrivastava, Viranjay M.-
dc.contributor.authorSingh, G.-
dc.contributor.authorYadav, K.S.-
dc.date.accessioned2022-12-14T05:15:23Z-
dc.date.available2022-12-14T05:15:23Z-
dc.date.issued2010-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8587-
dc.description.abstractFor a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.en_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectCapacitance-voltage curvesen_US
dc.subjectLCR Meteren_US
dc.subjectMOS deviceen_US
dc.subjectVEE Proen_US
dc.subjectVLSIen_US
dc.titleApplication of VEE Pro Software for Measurement of MOS Device Parameters using C-V curveen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

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