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|Title:||Basic Physical Analysis of New Sb-se-ge-in Chalcogenide Glassy Alloys by Predicting Structural Units: A Theoretical Approach|
|Publisher:||Jaypee University of Information Technology, Solan, H.P.|
|Abstract:||Low transmission losses, semiconducting and phase change properties of chalcogenides make them attractive candidates to be used in all-optical devices , conducting chalcogenide glass sensors  and phase change memory devices  etc. SbSeGe glasses have possible applications in IR optical fibers because of their large bandgap, low material dispersion, low light scattering and long wavelength multiphonon edge [4, 5]. For 25 at. % of Ge alloying in Sb10Se90- xGex glass alloys a more rigid composition is obtained [6, 7]. This composition contains only heteropolar Ge-Se and Sb-Se bonds. Sb10Se65Ge25 has been alloyed with In to investigate Sb10Se65Ge25-yIny (y = 0, 3, 6, 9, 12, 15) system via different physical parameters. Sharma et al. have reported that In addition increases the dark conductivity due to an increase in the number of defect states . It has also been reported that In alloying decreases the optical energy band gap , suitable to explore the system for optoelectronic devices, and thermal activation energy  of the systems. These results motivate us to study the In alloying on Sb10Se65Ge25 glass alloy. Due to large electronegativity difference between Ge and In, there is a possibility of increase in the glass forming region and In may also bring configurational and conformal changes in the base system.|
|Appears in Collections:||Journal Articles|
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