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Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8674
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dc.contributor.authorSharma, Neha-
dc.contributor.authorSharda, Sunanda-
dc.contributor.authorSharma, Dheeraj-
dc.contributor.authorSharma, Vineet-
dc.contributor.authorBarman, P.B.-
dc.contributor.authorKatyal, S.C.-
dc.contributor.authorSharma, Pankaj-
dc.contributor.authorHazra, S. K.-
dc.date.accessioned2022-12-21T05:55:34Z-
dc.date.available2022-12-21T05:55:34Z-
dc.date.issued2013-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8674-
dc.description.abstractSteady state current-voltage characteristics of the amorphous (Se80Te20)98Y2 (Y = Ag, Bi, Ge, Cd) semiconductors at different temperatures are reported. The measurements were performed using direct-current voltage bias to understand the basic conductivity mechanism and to evaluate the impact of each substituent on electrical response. The space charge limited conduction mechanism, and the density of states near Fermi level have been calculated. The difference in electrical response due to different substitutions in the glassy matrix is analyzed.en_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectAmorphous materialsen_US
dc.subjectElectrical propertiesen_US
dc.subjectDefectsen_US
dc.titleEffect of Substitutional Doping on Temperature Dependent Electrical Parameters of Amorphous Se-Te Semiconductorsen_US
dc.typeArticleen_US
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