Synthesis of FeO nanorods on silicon substrate using annealing technique

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DC Field	Value	Language
dc.contributor.author	Kumar, R.	-
dc.contributor.author	Thakur, N.	-
dc.date.accessioned	2023-01-13T05:17:42Z	-
dc.date.available	2023-01-13T05:17:42Z	-
dc.date.issued	2009	-
dc.identifier.uri	http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9154	-
dc.description.abstract	We have synthesized nanorods of FeO by annealing FeCl3 on silicon substrate at 950 oC in presence of H2 gas diluted in argon (Ar). Field emission electron microscopy (FESEM), Energy dispersive x-ray (EDX) and High resolution transmission electron microscopy (HRTEM) techniques have been used to characterize the nanorods. HRTEM study shows crystalline formation of nanorods. The electron diffraction pattern along viewing direction (111) and HRTEM show the interplaner distance equal to 2.17 Å which is nearly equal to the slandered value 2.3 Å of the FeO, EDX data also confirmed nanorods of FeO.	en_US
dc.language.iso	en	en_US
dc.publisher	Jaypee University of Information Technology, Solan, H.P.	en_US
dc.subject	FeO nanorods	en_US
dc.subject	Silicon substrate	en_US
dc.title	Synthesis of FeO nanorods on silicon substrate using annealing technique	en_US
dc.type	Article	en_US
Appears in Collections:	Journal Articles

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