Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9160
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDutta, D.-
dc.contributor.authorHazra, S.k.-
dc.contributor.authorDas, J.-
dc.contributor.authorSarkar, C.k.-
dc.contributor.authorBasu, S.-
dc.date.accessioned2023-01-13T08:52:31Z-
dc.date.available2023-01-13T08:52:31Z-
dc.date.issued2016-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9160-
dc.description.abstractIn atmospheric-pressure chemical vapor deposition-grown multilayer graphene films, a reversible change from n- to p-type conductivity has been observed in the temperature range of 25 C to 150 C upon exposure to hydrogen. This study was conducted with a simple Pd/graphene/Pd planar device. The inversion was observed at around 100 C, below which it showed stable n-type response to hydrogen. The hydrogen response was quite fast (1 s to 2 s) at 150 C. A plausible mechanism has been developed to explain such inversion. The selectivity and stability of the device in both n- and p-regions were investigated in the temperature range of 25 C to 150 C.en_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectMultilayer grapheneen_US
dc.subjectCVD growthen_US
dc.subjectReversible responseen_US
dc.titleTemperature- and Hydrogen-Gas-Dependent Reversible Inversion of n-/p-Type Conductivity in CVD-Grown Multilayer Graphene (MLG) Filmen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.