Designing Parameters for RF CMOS Cells

Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9251

Full metadata record

DC Field	Value	Language
dc.contributor.author	Srivastava, Viranjay M.	-
dc.contributor.author	Yadav, K. S.	-
dc.contributor.author	Singh, G.	-
dc.date.accessioned	2023-01-17T06:37:38Z	-
dc.date.available	2023-01-17T06:37:38Z	-
dc.date.issued	2010	-
dc.identifier.uri	http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9251	-
dc.description.abstract	In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	Jaypee University of Information Technology, Solan, H.P.	en_US
dc.subject	Cell Library	en_US
dc.subject	CMOS	en_US
dc.subject	Contact Resistance	en_US
dc.subject	DP4T Switch	en_US
dc.subject	Potential Barrier	en_US
dc.subject	RF Switch	en_US
dc.title	Designing Parameters for RF CMOS Cells	en_US
dc.type	Article	en_US
Appears in Collections:	Journal Articles

Files in This Item:

File	Description	Size	Format
Designing Parameters for RF CMOS Cells.pdf		547.88 kB	Adobe PDF	View/Open